| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Collector Emitter Saturation Voltage | 2.2 V |
| Mount | Through Hole |
| Current Rating | 28 A |
| Collector Emitter Voltage (VCEO) | 600 V |
| RoHS | Compliant |
| Max Collector Current | 28 A |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 125 W |
| Element Configuration | Single |
| Rise Time | 4.5 ns |
| Collector Emitter Breakdown Voltage | 600 V |
| Voltage Rating (DC) | 600 V |
| Lead Free | Lead Free |
| Case/Package | TO-247-3 |
| Max Power Dissipation | 125 W |
onsemi
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 7A 28A 125W 7.7ns/87ns
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!