| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
|---|---|
| SwitchingEnergy | Standard |
| OperatingTemperature | TO-247-3 |
| ProductStatus | Obsolete |
| Package/Case | 100 A |
| Grade | TO-247-3 |
| MountingType | 60 ns |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | |
| Series | - |
| Td(on/off)@25°C | -55°C ~ 175°C (TJ) |
| Qualification | 225 nC |
| SupplierDevicePackage | |
| InputType | 40ns/490ns |
| Vce(on)(Max)@Vge | 2.4V @ 15V, 25A |
| GateCharge | 600V, 25A, 23Ohm, 15V |
| Current-Collector(Ic)(Max) | 50 A |
| Ic | 428 W |
| TestCondition | Through Hole |
| Package | Tube |
| Power-Max | 1.74mJ (on), 560µJ (off) |
| IGBTType | Trench Field Stop |
onsemi
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 7A 28A 125W 7.7ns/87ns
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!