| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
|---|---|
| SwitchingEnergy | 2.3mJ (on), 1.1mJ (off) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| ProductStatus | Obsolete |
| Package/Case | 112 ns |
| Grade | Through Hole |
| MountingType | TO-264-3 |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | |
| Series | - |
| Td(on/off)@25°C | 15ns/110ns |
| Qualification | TO-264-3, TO-264AA |
| SupplierDevicePackage | |
| InputType | Standard |
| Vce(on)(Max)@Vge | 160 A |
| GateCharge | 220 nC |
| Current-Collector(Ic)(Max) | 64 A |
| Ic | 3.2V @ 15V, 40A |
| TestCondition | 600V, 40A, 5Ohm, 15V |
| Package | Tube |
| Power-Max | 500 W |
| IGBTType | NPT |
onsemi
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!