| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | - |
|---|---|
| RoHS Status: | Tube |
| Mounting Type: | Through Hole |
| Voltage - Breakdown: | TO-3PN |
| Vgs(th) (Max) @ Id: | 28 mOhm @ 35A, 10V |
| Capacitance Ratio: | 330W (Tc) |
| IGBT Type: | ±25V |
| FET Feature: | N-Channel |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | FQA70N15 |
| Voltage - Test: | 5400pF @ 25V |
| Email: | [email protected] |
| Series: | QFET® |
| Current - Continuous Drain (Id) @ 25°C: | 150V |
| Input Capacitance (Ciss) (Max) @ Vds: | 175nC @ 10V |
| Description: | MOSFET N-CH 150V 70A TO-3P |
| Vgs (Max): | 10V |
| Rds On (Max) @ Id, Vgs: | 70A (Tc) |
| Polarization: | TO-3P-3, SC-65-3 |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Expanded Description: | N-Channel 150V 70A (Tc) 330W (Tc) Through Hole TO-3PN |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
