shengyuic
shengyuic
FQB50N06LTM
the part number is FQB50N06LTM
Part
FQB50N06LTM
Manufacturer
Description
MOSFET N-CH 60V 52.4A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2717 $1.2463 $1.2081 $1.17 $1.1191 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 32 nC @ 5 V
FETFeature 3.75W (Ta), 121W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-263 (D2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 52.4A (Tc)
Vgs(Max) 1630 pF @ 25 V
MinRdsOn) 21mOhm @ 26.2A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FQB50N06LTM
FQB50N06LTM

onsemi

MOSFET N-CH 60V 52.4A D2PAK

FQB50N06TM

ON Semiconductor

MOSFET 60V N-Channel QFET

FQB50N06TM

onsemi

MOSFET N-CH 60V 50A D2PAK

FQB55N06TM

onsemi

MOSFET N-CH 60V 55A D2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!