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FQB630TM
the part number is FQB630TM
Part
FQB630TM
Manufacturer
Description
MOSFET N-CH 200V 9A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 25 nC @ 10 V
FETFeature 3.13W (Ta), 78W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-263 (D2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9A (Tc)
Vgs(Max) 550 pF @ 25 V
MinRdsOn) 400mOhm @ 4.5A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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