shengyuic
shengyuic
FQD10N20LTM
the part number is FQD10N20LTM
Part
FQD10N20LTM
Manufacturer
Description
MOSFET N-CH 200V 7.6A TO252
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.3216 $1.2952 $1.2555 $1.2159 $1.163 Get Quotation!
Specification
RdsOn(Max)@Id 2V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 17 nC @ 5 V
FETFeature 2.5W (Ta), 51W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType DPAK
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.6A (Tc)
Vgs(Max) 830 pF @ 25 V
MinRdsOn) 360mOhm @ 3.8A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQD10N20LTM
FQD10N20CTF

onsemi

MOSFET N-CH 200V 7.8A DPAK

FQD10N20CTM

onsemi

MOSFET N-CH 200V 7.8A DPAK

FQD10N20CTM_F080

onsemi

MOSFET N-CH 200V 7.8A DPAK

FQD10N20LTF

onsemi

MOSFET N-CH 200V 7.6A TO252

FQD10N20LTM

onsemi

MOSFET N-CH 200V 7.6A TO252

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!