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FQD4N20TM
the part number is FQD4N20TM
Part
FQD4N20TM
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.224 $0.2195 $0.2128 $0.2061 $0.1971 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id 220 pF @ 25 V
Vgs ±30V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature TO-252 (DPAK)
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252-3, DPak (2 Leads + Tab), SC-63
InputCapacitance(Ciss)(Max)@Vds 2.5W (Ta), 30W (Tc)
Series QFET®
Qualification
SupplierDevicePackage 6.5 nC @ 10 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3A (Tc)
Vgs(Max) -
MinRdsOn) 1.4Ohm @ 1.5A, 10V
Package Bulk
PowerDissipation(Max) Surface Mount
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POWER FIELD-EFFECT TRANSISTOR, 3

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