shengyuic
shengyuic
FQD60N03LTM
the part number is FQD60N03LTM
Part
FQD60N03LTM
Description
N-CHANNEL POWER MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.672 $0.6586 $0.6384 $0.6182 $0.5914 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±16V
Vgs 46 nC @ 10 V
FETFeature 45W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252 (DPAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET™
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) 900 pF @ 15 V
MinRdsOn) 23mOhm @ 30A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQD60N03LTM
FQD60N03

Fairchild Semiconductor

-

FQD60N03LTM

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FQD630TF

onsemi

MOSFET N-CH 200V 7A DPAK

FQD630TF

Fairchild Semiconductor

MOSFET N-CH 200V 7A DPAK

FQD630TM

onsemi

MOSFET N-CH 200V 7A DPAK

FQD630TM

Fairchild Semiconductor

MOSFET N-CH 200V 7A DPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!