shengyuic
shengyuic
FQD7N10LTM
the part number is FQD7N10LTM
Part
FQD7N10LTM
Manufacturer
Description
Trans MOSFET N-CH 100V 5.8A 3-Pin(2+Tab) DPAK T/R
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5395 $0.5287 $0.5125 $0.4963 $0.4748 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 30 Weeks
Email: [email protected]
FET Type: N-Channel
Series: QFET®
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Other Names: FQD7N10LTM-ND FQD7N10LTMTR
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For FQD7N10LTM
FQD7N10LTF

onsemi

MOSFET N-CH 100V 5.8A DPAK

FQD7N10LTM

ON Semiconductor

Trans MOSFET N-CH 100V 5.8A 3-Pin(2+Tab) DPAK T/R

FQD7N10LTM

onsemi

MOSFET N-CH 100V 5.8A DPAK

FQD7N10TM

Fairchild Semiconductor

MOSFET N-CH 100V 5.8A DPAK

FQD7N10TM

onsemi

MOSFET N-CH 100V 5.8A DPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!