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FQI4N20LTU
the part number is FQI4N20LTU
Part
FQI4N20LTU
Manufacturer
Description
MOSFET N-CH 200V 3.8A I2PAK
Lead Free/ROHS
pb RoHs
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Specification
RdsOn(Max)@Id 2V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 5.2 nC @ 5 V
FETFeature 3.13W (Ta), 45W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 5V, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.8A (Tc)
Vgs(Max) 310 pF @ 25 V
MinRdsOn) 1.35Ohm @ 1.9A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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