| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.4972 | $0.4873 | $0.4723 | $0.4574 | $0.4375 | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±25V |
| Vgs | 7 nC @ 10 V |
| FETFeature | 3.75W (Ta), 54W (Tc) |
| DraintoSourceVoltage(Vdss) | 150 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-262 (I2PAK) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | QFET® |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 5.4A (Tc) |
| Vgs(Max) | 230 pF @ 25 V |
| MinRdsOn) | 800mOhm @ 2.7A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Fairchild Semiconductor
Compliant Through Hole 50 ns Lead Free 90 ns 1.2 Ω TO-262-3 4.5 A
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!