1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.1869 | $0.1832 | $0.1776 | $0.1719 | $0.1645 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 6.2 nC @ 10 V |
FETFeature | 1W (Ta), 3W (Tc) |
DraintoSourceVoltage(Vdss) | 600 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-92-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | QFET® |
Qualification | |
SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 300mA (Tc) |
Vgs(Max) | 170 pF @ 25 V |
MinRdsOn) | 11.5Ohm @ 150mA, 10V |
Package | Cut Tape (CT),Tape & Box (TB) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!