shengyuic
shengyuic
FQPF10N60C
the part number is FQPF10N60C
Part
FQPF10N60C
Manufacturer
Description
MOSFET N-CH 600V 9.5A TO220F
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.012 $0.9918 $0.9614 $0.931 $0.8906 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 57 nC @ 10 V
FETFeature 50W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220F-3
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-220-3 Full Pack
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9.5A (Tc)
Vgs(Max) 2040 pF @ 25 V
MinRdsOn) 730mOhm @ 4.75A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQPF10N60C
FQPF10N20

onsemi

MOSFET N-CH 200V 6.8A TO220F

FQPF10N20C

ON Semiconductor

Single N-Channel 200 V 0.36 Ohm 26 nC 38 W DMOS Flange Mount Mosfet - TO-220F

FQPF10N20C

onsemi

MOSFET N-CH 200V 9.5A TO220F

FQPF10N50CF

ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

FQPF10N50CF

onsemi

MOSFET N-CH 500V 10A TO220F

FQPF10N50CF

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 1

FQPF10N60C

onsemi

MOSFET N-CH 600V 9.5A TO220F

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!