1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.8034 | $0.7873 | $0.7632 | $0.7391 | $0.707 | Get Quotation! |
Drain to Source Voltage (Vdss): | 200V |
---|---|
Power Dissipation (Max): | 2.2W (Tc) |
Package / Case: | TO-261-4, TO-261AA |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | SOT-223-4 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 21 Weeks |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | QFET® |
Current - Continuous Drain (Id) @ 25°C: | 850mA (Tc) |
Other Names: | FQT4N20LTF-ND FQT4N20LTFTR |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 1.35 Ohm @ 425mA, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!