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FQU4N20TU
the part number is FQU4N20TU
Part
FQU4N20TU
Manufacturer
Description
MOSFET N-CH 200V 3A IPAK
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Through Hole I-PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: QFET®
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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