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FQU8P10TU
the part number is FQU8P10TU
Part
FQU8P10TU
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.388 $0.3802 $0.3686 $0.357 $0.3414 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 15 nC @ 10 V
FETFeature 2.5W (Ta), 44W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType I-PAK
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-251-3 Short Leads, IPak, TO-251AA
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 6.6A (Tc)
Vgs(Max) 470 pF @ 25 V
MinRdsOn) 530mOhm @ 3.3A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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POWER FIELD-EFFECT TRANSISTOR, 6

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