shengyuic
shengyuic
G10N60
the part number is G10N60
Part
G10N60
Manufacturer
Description
-
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.455 $0.446 $0.43 $0.42 $0.4 Get Quotation!
Specification
Operating Temperature -55u00b0C ~ 150u00b0C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1587 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C 12A (Tc)
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250u00b5A
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 178W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Diodes Incorporated
Part Status Obsolete
Vgs (Max) u00b130V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number DMG10
Related Parts For G10N60
G10N03S

Goford Semiconductor

N30V,RD(MAX)<12M@10V,RD(MAX)<16M

G10N06

Goford Semiconductor

N60V,10A,RD<16M@10V,VTH1.2V~2.2V

G10N10A

Goford Semiconductor

MOSFET N-CH 100V 10A TO-252

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!