shengyuic
shengyuic
G2312
the part number is G2312
Part
G2312
Manufacturer
Description
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.0348 $0.0341 $0.0331 $0.032 $0.0306 Get Quotation!
Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±12V
Vgs 11 nC @ 4.5 V
FETFeature 1.25W (Tc)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType SOT-23
InputCapacitance(Ciss)(Max)@Vds Standard
Series TrenchFET®
Qualification
SupplierDevicePackage TO-236-3, SC-59, SOT-23-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 5A (Tc)
Vgs(Max) 780 pF @ 10 V
MinRdsOn) 18mOhm @ 4.2A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For G2312
G2312

Goford Semiconductor

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

G2313

Texas Instruments

-

G2315SH18T2

TE Connectivity

Thick Film Resistors - SMD THERM

G2315SH18T6

TE Connectivity

Thick Film Resistors - SMD THERM

G2315SH18T8

TE Connectivity

Thick Film Resistors - SMD THERM

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!