shengyuic
shengyuic
GB01SLT12-252
the part number is GB01SLT12-252
Part
GB01SLT12-252
Manufacturer
Description
DIODE SIL CARBIDE 1.2KV 1A TO252
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 69pF @ 1V, 1MHz
Speed No Recovery Time > 500mA (Io)
F TO-252-3, DPak (2 Leads + Tab), SC-63
ProductStatus Obsolete
Package/Case -55°C ~ 175°C
Grade -
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 2 µA @ 1200 V
MountingType TO-252
Series SiC Schottky MPS™
Qualification
SupplierDevicePackage 0 ns
Voltage-Forward(Vf)(Max)@If 1.8 V @ 1 A
Technology SiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 1A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Related Parts For GB01SLT12-252
GB015Z101MA6N

KYOCERA AVX

CAP CER 100PF 50V X7S SMD

GB01SLT06-214

GeneSiC Semiconductor

DIODE SIL CARB 650V 1A DO214AA

GB01SLT12-214

GeneSiC Semiconductor

DIODE SIL CARBIDE 1.2KV 2.5A SMB

GB01SLT12-220

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 1A TO220-2

GB01SLT12-252

GeneSiC Semiconductor

DIODE SIL CARBIDE 1.2KV 1A TO252

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!