shengyuic
shengyuic
GBL10E-E3/P
the part number is GBL10E-E3/P
Part
GBL10E-E3/P
Description
BRIDGE RECT 1PHASE 1KV 3A GBL
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 5 µA @ 1000 V
Voltage-PeakReverse(Max) 1 kV
OperatingTemperature -55°C ~ 150°C (TJ)
ProductStatus Active
Package/Case 4-SIP, GBL
Grade
MountingType Through Hole
Series -
Qualification
SupplierDevicePackage GBL
Voltage-Forward(Vf)(Max)@If 1 V @ 4 A
Technology Standard
Current-AverageRectified(Io) 3 A
Package Bulk
DiodeType Single Phase
Related Parts For GBL10E-E3/P
GBL10

GeneSiC Semiconductor

BRIDGE RECT 1PHASE 1KV 4A GBL

GBL10

SURGE

4A -1000V - GBL - BRIDGE

GBL10

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 4A GBL

GBL10-E3/45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBL

GBL10-E3/51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBL

GBL10-M3/45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 4A GBL

GBL10-M3/51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 4A GBL

GBL10E-E3/A

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBL

GBL10E-E3/P

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBL

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!