shengyuic
shengyuic
GF1A-E3/67A
the part number is GF1A-E3/67A
Part
GF1A-E3/67A
Manufacturer
Description
DIODE GEN PURP 50V 1A DO214BA
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5376 $0.5268 $0.5107 $0.4946 $0.4731 Get Quotation!
Specification
Min Operating Temperature -65 °C
Max Repetitive Reverse Voltage (Vrrm) 50 V
Schedule B 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080
Mount Surface Mount
Reverse Voltage 50 V
RoHS Compliant
Radiation Hardening No
Element Configuration Single
Reverse Recovery Time 2 µs
Number of Pins 2
Height 2.74 mm
Recovery Time 3 µs
Average Rectified Current 1 A
Width 2.9 mm
Lead Free Lead Free
Max Junction Temperature (Tj) 175 °C
Max Surge Current 30 A
Max Forward Surge Current (Ifsm) 30 A
Peak Non-Repetitive Surge Current 30 A
REACH SVHC Unknown
Forward Current 1 A
Peak Reverse Current 5 µA
Max Operating Temperature 175 °C
Length 4.75 mm
Contact Plating Tin
Packaging Cut Tape
Capacitance 15 pF
Max Reverse Voltage (DC) 50 V
Forward Voltage 1.1 V
Related Parts For GF1A-E3/67A
GF1A

Fairchild Semiconductor

DIODE GEN PURP 50V 1A SMA

GF1A

onsemi

DIODE GEN PURP 50V 1A DO214AC

GF1A-E3/67A

Vishay

DIODE GEN PURP 50V 1A DO214BA

GF1A-E3/67A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO214BA

GF1A/67A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO214BA

GF1AHE3/67A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO214BA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!