shengyuic
shengyuic
GPA801DT-TP
the part number is GPA801DT-TP
Part
GPA801DT-TP
Manufacturer
Description
DIODE GEN PURP 50V 8A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr Surface Mount
Speed 5 µA @ 50 V
F D2PAK
ProductStatus Obsolete
Package/Case 50 V
Grade -
Capacitance@Vr TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ReverseRecoveryTime(trr) 50pF @ 4V, 1MHz
MountingType -65°C ~ 150°C
Series -
Qualification
SupplierDevicePackage -
Voltage-Forward(Vf)(Max)@If Standard Recovery >500ns, > 200mA (Io)
Technology Standard
Voltage-DCReverse(Vr)(Max) 8A
OperatingTemperature-Junction -
Current-AverageRectified(Io) 1.1 V @ 8 A
Package Tape & Reel (TR)
Related Parts For GPA801DT-TP
GPA801 C0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 8A TO220AC

GPA801-BP

Micro Commercial Co

DIODE GEN PURP 50V 8A TO220AC

GPA801DT-TP

Micro Commercial Co

DIODE GEN PURP 50V 8A D2PAK

GPA801HC0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 8A TO220AC

GPA802 C0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 8A TO220AC

GPA802-BP

Micro Commercial Co

DIODE GEN PURP 100V 8A TO220AC

GPA802HC0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 8A TO220AC

GPA803 C0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 8A TO220AC

GPA803-BP

Micro Commercial Co

DIODE GEN PURP 200V 8A TO220AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!