shengyuic
shengyuic
HS1MFL
the part number is HS1MFL
Part
HS1MFL
Description
DIODE GEN PURP 1KV 1A SOD123F
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.291 $0.2852 $0.2764 $0.2677 $0.2561 Get Quotation!
Specification
Current-ReverseLeakage@Vr 5 µA @ 1000 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F Surface Mount
ProductStatus Active
Package/Case SOD-123F
Grade -
Capacitance@Vr 6pF @ 4V, 1MHz
ReverseRecoveryTime(trr) 75 ns
MountingType SOD-123F
Series -
Qualification
SupplierDevicePackage -55°C ~ 150°C
Voltage-Forward(Vf)(Max)@If 1.7 V @ 1 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 1000 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 1A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Related Parts For HS1MFL
HS1M

Suzhou Good-Ark Elec

-

HS1M

Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO214AC

HS1M

Good-Ark Semiconductor

RECTIFIER, ULTRA-FAST/HIGH EFFIC

HS1M

SURGE

DIODE GEN PURP 1KV 1A DO214AC

HS1M R3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

HS1MAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A THIN SMA

HS1MALH

Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT

HS1MF-T

Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT

HS1MFL

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD123F

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!