HS3M R6G

Part

HS3M R6G

Manufacturer

Taiwan Semiconductor Corporation

Description

DIODE GEN PURP 1KV 3A DO214AB

Lead Free/ROHS

Datasheets

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Specification

Current-ReverseLeakage@Vr	50pF @ 4V, 1MHz
Speed	Fast Recovery =< 500ns, > 200mA (Io)
F	-
ProductStatus	Discontinued at Digi-Key
Package/Case	DO-214AB, SMC
Grade	75 ns
Capacitance@Vr	-
ReverseRecoveryTime(trr)	10 µA @ 1000 V
MountingType	Surface Mount
Series	-
Qualification
SupplierDevicePackage	DO-214AB (SMC)
Voltage-Forward(Vf)(Max)@If	1.7 V @ 3 A
Technology	Standard
Voltage-DCReverse(Vr)(Max)	1000 V
OperatingTemperature-Junction	-55°C ~ 150°C
Current-AverageRectified(Io)	3A
Package	Tape & Reel (TR)