| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Current-ReverseLeakage@Vr | 210 µA @ 650 V |
|---|---|
| Current-AverageRectified(Io)(perDiode) | 20A (DC) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ProductStatus | Discontinued at Digi-Key |
| Package/Case | TO-247-3 |
| Grade | - |
| ReverseRecoveryTime(trr) | - |
| MountingType | Through Hole |
| Series | CoolSiC™+ |
| Qualification | - |
| SupplierDevicePackage | PG-TO247-3 |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 20 A |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| OperatingTemperature-Junction | -55°C ~ 175°C |
| Package | Tube |
| DiodeConfiguration | 1 Pair Common Cathode |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!