shengyuic
shengyuic
IPA80R1K0CEXKSA1
the part number is IPA80R1K0CEXKSA1
Part
IPA80R1K0CEXKSA1
Manufacturer
Description
MOSFET N-CH 800V 3.6A TO220
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 3.9V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 31 nC @ 10 V
FETFeature 32W (Tc)
DraintoSourceVoltage(Vdss) 800 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Discontinued at Digi-Key
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO220-FP
InputCapacitance(Ciss)(Max)@Vds -
Series CoolMOS™ CE
Qualification
SupplierDevicePackage TO-220-3 Full Pack
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.6A (Tc)
Vgs(Max) 785 pF @ 100 V
MinRdsOn) 950mOhm @ 3.6A, 10V
Package Tube
PowerDissipation(Max) -40°C ~ 150°C (TJ)
Related Parts For IPA80R1K0CEXKSA1
IPA80R1K0CEXKSA1

Infineon Technologies

MOSFET N-CH 800V 3.6A TO220

IPA80R1K0CEXKSA2

Infineon Technologies

MOSFET N-CH 800V 5.7A TO220-FP

IPA80R1K2P7XKSA1

Infineon Technologies

MOSFET N-CH 800V 4.5A TO220

IPA80R1K4CEXKSA1

Infineon Technologies

MOSFET N-CH 800V 2.8A TO220

IPA80R1K4CEXKSA2

Infineon Technologies

MOSFET N-CH 800V 3.9A TO220

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!