shengyuic
shengyuic
IPD60N10S4L12ATMA1
the part number is IPD60N10S4L12ATMA1
Part
IPD60N10S4L12ATMA1
Manufacturer
Description
MOSFET N-CH 100V 60A TO252-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.782 $1.7464 $1.6929 $1.6394 $1.5682 Get Quotation!
Specification
RdsOn(Max)@Id 2.1V @ 46µA
Vgs(th)(Max)@Id ±16V
Vgs 49 nC @ 10 V
FETFeature 94W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType PG-TO252-3-313
InputCapacitance(Ciss)(Max)@Vds -
Series HEXFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 60A (Tc)
Vgs(Max) 3170 pF @ 25 V
MinRdsOn) 12mOhm @ 60A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPD60N10S4L12ATMA1
IPD600N25N3GATMA1

Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

IPD600N25N3GBTMA1

Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

IPD60N10S412ATMA1

Infineon Technologies

MOSFET N-CH 100V 60A TO252-3

IPD60N10S4L12ATMA1

Infineon Technologies

MOSFET N-CH 100V 60A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!