| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.6724 | $0.659 | $0.6388 | $0.6186 | $0.5917 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 600V |
|---|---|
| Power Dissipation (Max): | 30W (Tc) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | PG-TO252-3 |
| Vgs(th) (Max) @ Id: | 4V @ 80µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | CoolMOS™ P7 |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Other Names: | IPD60R600P7SAUMA1-ND IPD60R600P7SAUMA1TR SP001658286 |
| Input Capacitance (Ciss) (Max) @ Vds: | 363pF @ 400V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 1.7A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!