1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Drain to Source Voltage (Vdss): | 600V |
---|---|
Power Dissipation (Max): | 37W (Tc) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | PG-TO252-3 |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | CoolMOS™ |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Other Names: | IPD60R950C6BTMA1 IPD60R950C6INTR SP000629368 |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!