shengyuic
shengyuic
IPI50CN10NGHKSA1
the part number is IPI50CN10NGHKSA1
Part
IPI50CN10NGHKSA1
Manufacturer
Description
MOSFET N-CH 100V 20A TO262-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 20µA
Vgs(th)(Max)@Id ±20V
Vgs 16 nC @ 10 V
FETFeature 44W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PG-TO262-3
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 20A (Tc)
Vgs(Max) 1090 pF @ 50 V
MinRdsOn) 50mOhm @ 20A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPI50CN10NGHKSA1
IPI50CN10NGHKSA1

Infineon Technologies

MOSFET N-CH 100V 20A TO262-3

IPI50N10S3L16AKSA1

Infineon Technologies

MOSFET N-CH 100V 50A TO262-3

IPI50N12S3L15AKSA1

Infineon

MOSFET N-CHANNEL_100+

IPI50R140CP

Infineon Technologies

MOSFET N-CH 550V 23A TO262-3

IPI50R140CPXKSA1

Infineon Technologies

HIGH POWER_LEGACY

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!