1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 1090 pF @ 50 V |
---|---|
Vgs(th)(Max)@Id | 44W (Tc) |
Vgs | - |
FETFeature | PG-TO220-3 |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | 10V |
DriveVoltage(MaxRdsOn | 50mOhm @ 20A, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | ±20V |
InputCapacitance(Ciss)(Max)@Vds | Through Hole |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | 16 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
Vgs(Max) | -55°C ~ 175°C (TJ) |
MinRdsOn) | 4V @ 20µA |
Package | Tube |
PowerDissipation(Max) | TO-220-3 |
Infineon
Non-Compliant Production (Last Updated: 2 years ago) 500 100 W 15.7 mΩ 120 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!