IPU039N03LG

Part

IPU039N03LG

Manufacturer

Description

Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN

Lead Free/ROHS

Datasheets

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Specification

Min Operating Temperature	-55 °C
Drain to Source Breakdown Voltage	30 V
Gate to Source Voltage (Vgs)	20 V
Mount	Through Hole
Fall Time	5 ns
RoHS	Compliant
Max Operating Temperature	175 °C
Drain to Source Voltage (Vdss)	30 V
Power Dissipation	94 W
Drain to Source Resistance	3.9 mΩ
Continuous Drain Current (ID)	50 A
Element Configuration	Single
Rise Time	7 ns
Turn-Off Delay Time	35 ns
Number of Pins	3
Input Capacitance	5.3 nF
Rds On Max	3.9 mΩ
Case/Package	TO-251-3
Max Power Dissipation	94 W

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