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Drain to Source Voltage (Vdss): | 25V |
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Power Dissipation (Max): | 94W (Tc) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | P-TO251-3 |
Vgs(th) (Max) @ Id: | 2V @ 50µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 25V 50A (Tc) 94W (Tc) Through Hole P-TO251-3 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | OptiMOS™ |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Other Names: | SP000014903 |
Input Capacitance (Ciss) (Max) @ Vds: | 3110pF @ 15V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 30A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
INFINEON
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN
INFINEON
Power Field-Effect Transistor, 50A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN
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