1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $3.7056 | $3.6315 | $3.5203 | $3.4092 | $3.2609 | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 930µA |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | ±20V |
FETFeature | Through Hole |
DraintoSourceVoltage(Vdss) | 550 V |
OperatingTemperature | TO-247-3 |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Last Time Buy |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 64 nC @ 10 V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | 2540 pF @ 100 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 23A (Tc) |
Vgs(Max) | 192W (Tc) |
MinRdsOn) | 140mOhm @ 14A, 10V |
Package | Tube |
PowerDissipation(Max) | PG-TO247-3-1 |
Infineon
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!