shengyuic
shengyuic
IQD009N06NM5ATMA1
the part number is IQD009N06NM5ATMA1
Part
IQD009N06NM5ATMA1
Manufacturer
Description
TRENCH 40<-<100V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $4.042 $3.9612 $3.8399 $3.7186 $3.557 Get Quotation!
Specification
RdsOn(Max)@Id 3.3V @ 163µA
Vgs(th)(Max)@Id ±20V
Vgs 150 nC @ 10 V
FETFeature 3W (Ta), 333W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TSON-8-U04
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™ 5
Qualification
SupplierDevicePackage 8-PowerTDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 42A (Ta), 445A (Tc)
Vgs(Max) 12000 pF @ 30 V
MinRdsOn) 0.9mOhm @ 50A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IQD009N06NM5ATMA1
IQD005N04NM6ATMA1

Infineon Technologies

TRENCH <= 40V

IQD005N04NM6CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

IQD009N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

IQD009N06NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

IQD016N08NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

IQD016N08NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

IQD020N10NM5ATMA1

Infineon Technologies

TRENCH >=100V

IQD020N10NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

IQD063N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!