shengyuic
shengyuic
IRF100B201
the part number is IRF100B201
Part
IRF100B201
Manufacturer
Description
MOSFET N-CH 100V 192A TO220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.1951 $3.1312 $3.0353 $2.9395 $2.8117 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 255 nC @ 10 V
FETFeature 441W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220AB
InputCapacitance(Ciss)(Max)@Vds -
Series HEXFET®, StrongIRFET™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 192A (Tc)
Vgs(Max) 9500 pF @ 50 V
MinRdsOn) 4.2mOhm @ 115A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IRF100B201
IRF100B201

Infineon

MOSFET N-CH 100V 192A TO-220AB

IRF100B201

Infineon Technologies

MOSFET N-CH 100V 192A TO220AB

IRF100B201PBF

International Rectifier

TO-220

IRF100B202

Infineon

MOSFET N-CH 100V 97A TO-220AB

IRF100B202

Infineon Technologies

MOSFET N-CH 100V 97A TO220AB

IRF100DM116XTMA1

Infineon Technologies

TRENCH >=100V DIRECTFET

IRF100P218AKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

IRF100P218XKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!