shengyuic
shengyuic
IRF200P223
the part number is IRF200P223
Part
IRF200P223
Manufacturer
Description
MOSFET N-CH 200V 100A TO247AC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $5.5361 $5.4254 $5.2593 $5.0932 $4.8718 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 270µA
Vgs(th)(Max)@Id ±20V
Vgs 102 nC @ 10 V
FETFeature 313W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247AC
InputCapacitance(Ciss)(Max)@Vds -
Series StrongIRFET™
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 100A (Tc)
Vgs(Max) 5094 pF @ 50 V
MinRdsOn) 11.5mOhm @ 60A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IRF200P223
IRF2001

International Rectifier

SMD-8

IRF2002

International Rectifier

SMD-8

IRF200B211

Infineon

MOSFET N-CH 200V 12A TO-220AB

IRF200B211

Infineon Technologies

MOSFET N-CH 200V 12A TO220AB

IRF200P222

Infineon Technologies

MOSFET N-CH 200V 182A TO247AC

IRF200P223

Infineon

MOSFET N-CH 200V 100A TO247AC

IRF200P223

Infineon Technologies

MOSFET N-CH 200V 100A TO247AC

IRF200S234

Infineon

TRENCH_MOSFETS

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!