1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Drain to Source Voltage (Vdss): | 75V |
---|---|
Power Dissipation (Max): | 170W (Tc) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-262 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-262 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Other Names: | *IRF2807ZL |
Input Capacitance (Ciss) (Max) @ Vds: | 3270pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 53A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!