| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Dual Supply Voltage | 75 V |
| Mount | Through Hole |
| Fall Time | 49 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 75 V |
| Drain to Source Resistance | 12.6 mΩ |
| Element Configuration | Single |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Height | 16.51 mm |
| Number of Elements | 1 |
| Input Capacitance | 3.27 nF |
| Width | 4.826 mm |
| Lead Free | Lead Free |
| Rds On Max | 12.6 mΩ |
| Max Power Dissipation | 200 W |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Breakdown Voltage | 75 V |
| On-State Resistance | 12.6 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Current Rating | 80 A |
| Turn-On Delay Time | 12 ns |
| Resistance | 12.6 Ω |
| Max Operating Temperature | 175 °C |
| Power Dissipation | 200 W |
| Continuous Drain Current (ID) | 75 A |
| Rise Time | 80 ns |
| Length | 10.668 mm |
| Turn-Off Delay Time | 55 ns |
| Packaging | Bulk |
| Package Quantity | 1000 |
| Voltage Rating (DC) | 75 V |
| Case/Package | TO-220AB |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!