| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.576 | $0.5645 | $0.5472 | $0.5299 | $0.5069 | Get Quotation! |
| Continuous Drain Current (Id) | 210A |
|---|---|
| Type | Nu6c9fu9053 |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 3.8W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250u03bcA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.8mu03a9@10V,76A |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!