| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 2.5W (Ta) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 8-SO |
| Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 20V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Other Names: | IRF3717PBFTR SP001559604 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2890pF @ 10V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 20A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!