| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
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| Drain to Source Voltage (Vdss): | 55V |
|---|---|
| Power Dissipation (Max): | 330W (Tc) |
| Package / Case: | TO-220-3 |
| Mounting Type: | Through Hole |
| Packaging: | Tube |
| Supplier Device Package: | TO-220AB |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-220AB |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Other Names: | *IRF3805 |
| Input Capacitance (Ciss) (Max) @ Vds: | 7960pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 75A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 290nC @ 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!