| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $2.226 | $2.1815 | $2.1147 | $2.0479 | $1.9589 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Threshold Voltage | 4 V |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Dual Supply Voltage | 100 V |
| Mount | Through Hole |
| Fall Time | 120 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Resistance | 15 mΩ |
| Element Configuration | Single |
| Number of Channels | 1 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Height | 8.763 mm |
| Number of Elements | 1 |
| Recovery Time | 150 ns |
| Input Capacitance | 3.83 nF |
| Width | 4.69 mm |
| Lead Free | Lead Free |
| Rds On Max | 15 mΩ |
| Max Power Dissipation | 260 W |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Breakdown Voltage | 100 V |
| On-State Resistance | 15 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Current Rating | 80 A |
| Turn-On Delay Time | 15 ns |
| Resistance | 15 Ω |
| Max Operating Temperature | 175 °C |
| Power Dissipation | 260 W |
| Continuous Drain Current (ID) | 80 A |
| Rise Time | 130 ns |
| Length | 10.5156 mm |
| Turn-Off Delay Time | 61 ns |
| Contact Plating | Tin |
| Packaging | Bulk |
| Package Quantity | 1000 |
| Voltage Rating (DC) | 100 V |
| Case/Package | TO-220AB |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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