| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.2846 | $0.2789 | $0.2704 | $0.2618 | $0.2505 | Get Quotation! |
| Continuous Drain Current (Id) | 9.7A |
|---|---|
| Type | 2u4e2aNu6c9fu9053 |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.35V@25u03bcA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 15.5mu03a9@10V,9.7A |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!