| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Continuous Drain Current (Id) | 9.7A |
|---|---|
| Type | 2u4e2aNu6c9fu9053 |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.35V@25u03bcA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 15.5mu03a9@10V,9.7A |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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