shengyuic
shengyuic
IRF8707TRPB
the part number is IRF8707TRPB
Part
IRF8707TRPB
Manufacturer
Description
-
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.0738 $0.0724 $0.0701 $0.0679 $0.065 Get Quotation!
Specification
Continuous Drain Current (Id) 11A
Type Nu6c9fu9053
Drain Source Voltage (Vdss) 30V
Power Dissipation (Pd) 2.5W
Gate Threshold Voltage (Vgs(th)@Id) 2.35V@25u03bcA
Drain Source On Resistance (RDS(on)@Vgs,Id) 11.9mu03a9@10V,11A
Related Parts For IRF8707TRPB
IRF8010L

International Rectifier

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

IRF8010PBF

Infineon

MOSFET N-CH 100V 80A TO-220AB

IRF8010PBF

Infineon Technologies

MOSFET N-CH 100V 80A TO220AB

IRF8010SPBF

Infineon

MOSFET N-CH 100V 80A D2PAK

IRF8010SPBF

Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

IRF8010STRLPBF

Infineon

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

IRF8010STRLPBF

Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!