| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $63.0936 | $61.8317 | $59.9389 | $58.0461 | $55.5224 | Get Quotation! |
| Voltage-CollectorEmitterBreakdown(Max) | 3600 V |
|---|---|
| SwitchingEnergy | - |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| ProductStatus | Active |
| Package/Case | 1.7 µs |
| Grade | Through Hole |
| MountingType | TO-247PLUS-HV |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | - |
| Series | BIMOSFET™ |
| Td(on/off)@25°C | 46ns/205ns |
| Qualification | TO-247-3 Variant |
| SupplierDevicePackage | - |
| InputType | Standard |
| Vce(on)(Max)@Vge | 420 A |
| GateCharge | 210 nC |
| Current-Collector(Ic)(Max) | 125 A |
| Ic | 2.9V @ 15V, 50A |
| TestCondition | 960V, 50A, 5Ohm, 15V |
| Package | Tube |
| Power-Max | 660 W |
| IGBTType | - |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!