1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $49.4827 | $48.493 | $47.0086 | $45.5241 | $43.5448 | Get Quotation! |
RdsOn(Max)@Id | 6.5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 360 nC @ 10 V |
FETFeature | 520W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | ISOPLUSi5-Pak™ |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HiPerFET™, Polar |
Qualification | |
SupplierDevicePackage | ISOPLUSi5-Pak™ |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
Vgs(Max) | 21000 pF @ 25 V |
MinRdsOn) | 340mOhm @ 16A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!