shengyuic
shengyuic
IXTP1N80P
the part number is IXTP1N80P
Part
IXTP1N80P
Manufacturer
Description
MOSFET N-CH 800V 1A TO220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.5931 $1.5612 $1.5134 $1.4657 $1.4019 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 50µA
Vgs(th)(Max)@Id ±20V
Vgs 9 nC @ 10 V
FETFeature 42W (Tc)
DraintoSourceVoltage(Vdss) 800 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220-3
InputCapacitance(Ciss)(Max)@Vds -
Series Polar
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 1A (Tc)
Vgs(Max) 250 pF @ 25 V
MinRdsOn) 14Ohm @ 500mA, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IXTP1N80P
IXTP01N100D

IXYS

MOSFET N-CH 1000V 400MA TO220AB

IXTP02N120P

IXYS

MOSFET N-CH 1200V 200MA TO220AB

IXTP02N50D

IXYS

MOSFET N-CH 500V 200MA TO220AB

IXTP03N90P

IXYS

MOSFET N-CH TO220AB

IXTP05N100

IXYS

MOSFET N-CH 1000V 750MA TO220AB

IXTP05N100M

IXYS

MOSFET N-CH 1000V 700MA TO220AB

IXTP05N100P

IXYS

MOSFET N-CH 1000V 500MA TO220AB

IXTP06N120P

IXYS

MOSFET N-CH 1200V 600MA TO220AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!